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1 Ergebnisse
1
Gate oxide yield improvement for 0.18μm power semiconductor..:
, In:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
,
Greenwood, B.
;
Suhwanov, A.
;
Daniel, D.
... - p. 346-351 , 2017
Link:
https://doi.org/10.1109/ASMC.2017.7969258
RT T1 <cTitle>2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)</cTitle>: T1 <Title>Gate oxide yield improvement for 0.18μm power semiconductor devices with deep trenches: DP: Discrete and power devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7969258&Exemplar=1&LAN=DE A1 Greenwood, B. A1 Suhwanov, A. A1 Daniel, D. A1 Menon, S. A1 Price, D. A1 Hose, S. A1 Guo, J. A1 Piatt, G. A1 Lu, M. A1 Watanabe, Y. A1 Kanuma, Y. A1 Takada, R. A1 Sheng, L. A1 Gambino, J. P. A1 Whear, Oli YR 2017 SN 2376-6697 K1 Logic gates K1 Silicon K1 Stress K1 Oxidation K1 Silicon compounds K1 Annealing K1 Power semiconductor devices K1 Yield K1 gate oxide K1 dislocation K1 power semiconductor K1 deep trench SP 346 OP 351 LK http://dx.doi.org/https://doi.org/10.1109/ASMC.2017.7969258 DO https://doi.org/10.1109/ASMC.2017.7969258 SF ELIB - SuUB Bremen
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