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Investigations on elimination of plasma-induced Si substrat..:
, In:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
,
Lin, Chih-Yao
;
Lo, Chieh
;
Chen, Wei-Chen
... - p. 431-434 , 2017
Link:
https://doi.org/10.1109/ASMC.2017.7969275
RT T1 <cTitle>2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)</cTitle>: T1 <Title>Investigations on elimination of plasma-induced Si substrate damage for 3D NAND fabrication: AEPM: Advanced equipment processes and materials</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7969275&Exemplar=1&LAN=DE A1 Lin, Chih-Yao A1 Lo, Chieh A1 Chen, Wei-Chen A1 Yang, Zusing A1 Chang, Sheng-Yuan A1 Lee, Hong-Ji A1 Lian, Nan-Tzu A1 Yang, Ta-Hone A1 Chen, Kuang-Chao A1 Lu, Chih-Yuan YR 2017 SN 2376-6697 K1 Substrates K1 Etching K1 Silicon K1 Plasmas K1 Three-dimensional displays K1 Implants K1 Plasma-induced Si substrate damage K1 high bias power K1 low bias power K1 surface layer removal process K1 damaged-layer SP 431 OP 434 LK http://dx.doi.org/https://doi.org/10.1109/ASMC.2017.7969275 DO https://doi.org/10.1109/ASMC.2017.7969275 SF ELIB - SuUB Bremen
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