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Method and structure to reduce leakage for ESD device: ET/I..:
, In:
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
,
Ginawi, Ahmed Y.
;
Habib, Nazmul
;
Muhammad, Mujahid
. - p. 435-438 , 2017
Link:
https://doi.org/10.1109/ASMC.2017.7969276
RT T1
2017 28th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)
: T1
Method and structure to reduce leakage for ESD device: ET/ID: Enabling technologies and innovative devices
UL https://suche.suub.uni-bremen.de/peid=ieee-7969276&Exemplar=1&LAN=DE A1 Ginawi, Ahmed Y. A1 Habib, Nazmul A1 Muhammad, Mujahid A1 Bickford, Jeanne P. YR 2017 SN 2376-6697 K1 Electrostatic discharges K1 Clamps K1 Manufacturing K1 Systems operation K1 Logic gates K1 Field effect transistors K1 Discharges (electric) K1 Trap Charge Device K1 Electrostatic Discharge Device K1 Stacked Chips SP 435 OP 438 LK http://dx.doi.org/https://doi.org/10.1109/ASMC.2017.7969276 DO https://doi.org/10.1109/ASMC.2017.7969276 SF ELIB - SuUB Bremen
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