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Characterization of HfO2/Al2O3 gate dielectric nanometer-st..:
, In:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
,
Wu, Li-Fan
;
Zhang, Yu-Ming
;
Lu, Hong-Liang
. - p. 978-980 , 2016
Link:
https://doi.org/10.1109/ICSICT.2016.7998624
RT T1 <cTitle>2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)</cTitle>: T1 <Title>Characterization of HfO2/Al2O3 gate dielectric nanometer-stacks grown by atomic layer deposition on InAlAs substrates</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7998624&Exemplar=1&LAN=DE A1 Wu, Li-Fan A1 Zhang, Yu-Ming A1 Lu, Hong-Liang A1 Zhang, Yi-Men YR 2016 K1 Annealing K1 Films K1 Handheld computers K1 Logic gates K1 Dielectrics K1 Capacitance-voltage characteristics K1 Atomic layer deposition SP 978 OP 980 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2016.7998624 DO https://doi.org/10.1109/ICSICT.2016.7998624 SF ELIB - SuUB Bremen
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