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1 Ergebnisse
1
Investigation of the reverse voltage stress on the fluorine..:
, In:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
,
Zhang, Ya-Song
;
Cao, Yan-Rong
;
Li, Peng
... - p. 1035-1037 , 2016
Link:
https://doi.org/10.1109/ICSICT.2016.7998642
RT T1
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
: T1
Investigation of the reverse voltage stress on the fluorine plasma treated AlGaN/GaN Schottky barrier diodes
UL https://suche.suub.uni-bremen.de/peid=ieee-7998642&Exemplar=1&LAN=DE A1 Zhang, Ya-Song A1 Cao, Yan-Rong A1 Li, Peng A1 Dai, Feng A1 Zhu, Qing A1 Lv, Ling A1 Ma, Xiao-Hua A1 Hao, Yue YR 2016 K1 Aluminum gallium nitride K1 Wide band gap semiconductors K1 Stress K1 Plasmas K1 Schottky diodes K1 Interface states K1 Schottky barriers SP 1035 OP 1037 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2016.7998642 DO https://doi.org/10.1109/ICSICT.2016.7998642 SF ELIB - SuUB Bremen
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