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1 Ergebnisse
1
Vertical Channel Capacitor-less One-Transistor DRAMs with a..:
, In:
2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)
,
Hsu, Ting-Pi
;
Lin, Jyi-Tsong
;
Huang, Chih-Kai
... - p. 869-871 , 2016
Link:
https://doi.org/10.1109/ICSICT.2016.7999065
RT T1 <cTitle>2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)</cTitle>: T1 <Title>Vertical Channel Capacitor-less One-Transistor DRAMs with a pass-way Trench for improving Retention Time</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-7999065&Exemplar=1&LAN=DE A1 Hsu, Ting-Pi A1 Lin, Jyi-Tsong A1 Huang, Chih-Kai A1 Lin, Chih-Chia A1 Kranti, Abhinav A1 Yu, Cyuan-You A1 Chang, Ting-Chung A1 Lin, Po-Hsieh YR 2016 K1 Logic gates K1 Programming K1 Random access memory K1 Etching K1 Memory management K1 CMOS technology K1 Silicon SP 869 OP 871 LK http://dx.doi.org/https://doi.org/10.1109/ICSICT.2016.7999065 DO https://doi.org/10.1109/ICSICT.2016.7999065 SF ELIB - SuUB Bremen
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