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1 Ergebnisse
1
Single bit-line low power 9T static random access memory:
, In:
2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)
,
Inamdar, Akshatha P
;
Divya, P A
;
Ravish Aradhya, H. V.
- p. 1943-1947 , 2017
Link:
https://doi.org/10.1109/RTEICT.2017.8256937
RT T1
2017 2nd IEEE International Conference on Recent Trends in Electronics, Information & Communication Technology (RTEICT)
: T1
Single bit-line low power 9T static random access memory
UL https://suche.suub.uni-bremen.de/peid=ieee-8256937&Exemplar=1&LAN=DE A1 Inamdar, Akshatha P A1 Divya, P A A1 Ravish Aradhya, H. V. YR 2017 K1 SRAM cells K1 Inverters K1 Circuit stability K1 Transistors K1 Writing K1 Power demand K1 Single bit-line K1 Low power operation K1 Static Noise K1 Margin K1 9T SRAM SP 1943 OP 1947 LK http://dx.doi.org/https://doi.org/10.1109/RTEICT.2017.8256937 DO https://doi.org/10.1109/RTEICT.2017.8256937 SF ELIB - SuUB Bremen
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