I agree that this site is using cookies. You can find further informations
here
.
X
Login
Merkliste (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
zur Desktop-Version
Toggle navigation
Merkliste
1 Ergebnisse
1
Electrical characterization of HfO2 based resistive RAM dev..:
, In:
2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)
,
Tekin, S.B.
;
Kalem, S.
;
Kaya, Z.E.
. - p. 1-4 , 2018
Link:
https://doi.org/10.1109/ULIS.2018.8354734
RT T1 <cTitle>2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS)</cTitle>: T1 <Title>Electrical characterization of HfO2 based resistive RAM devices having different bottom electrode metallizations</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8354734&Exemplar=1&LAN=DE A1 Tekin, S.B. A1 Kalem, S. A1 Kaya, Z.E. A1 Jalaguier, E. YR 2018 SN 2472-9132 K1 Tin K1 Electrodes K1 Random access memory K1 Voltage measurement K1 Switches K1 Hafnium compounds K1 Capacitance K1 Resistive RAM K1 RRAM K1 OxRAM K1 HfO2 K1 resistive switching K1 embedded non-volatile memory K1 resistive memory K1 capacitance SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ULIS.2018.8354734 DO https://doi.org/10.1109/ULIS.2018.8354734 SF ELIB - SuUB Bremen
Export
RefWorks (nur Desktop-Version!)
Flow
(Zuerst in
Flow
einloggen, dann importieren)
