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Cathodoluminescence mapping for the determination of n-type..:
, In:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
,
Chen, Hung-Ling
;
Harmand, Jean-Christophe
;
Cattoni, Andrea
... - p. 1289-1293 , 2017
Link:
https://doi.org/10.1109/PVSC.2017.8366459
RT T1 <cTitle>2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)</cTitle>: T1 <Title>Cathodoluminescence mapping for the determination of n-type doping in single GaAs nanowires</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8366459&Exemplar=1&LAN=DE A1 Chen, Hung-Ling A1 Harmand, Jean-Christophe A1 Cattoni, Andrea A1 Collin, Stephane A1 Himwas, Chalermchai A1 Scaccabarozzi, Andrea A1 Rale, Pierre A1 Oehler, Fabrice A1 Lemaitre, Aristide A1 Lombez, Laurent A1 Guillemoles, Jean-Francois A1 Tchernycheva, Maria YR 2017 K1 Nanowires K1 Gallium arsenide K1 Doping K1 Temperature measurement K1 Semiconductor device measurement K1 Luminescence K1 Photovoltaic cells K1 adhesion K1 CPV K1 reliability K1 silicone K1 UV degradation SP 1289 OP 1293 LK http://dx.doi.org/https://doi.org/10.1109/PVSC.2017.8366459 DO https://doi.org/10.1109/PVSC.2017.8366459 SF ELIB - SuUB Bremen
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