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In situ control over the sublattice orientation of GaP/Si(1..:
, In:
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
,
Paszuk, Agnieszka
;
Supplie, Oliver
;
Bruckner, Sebastian
... - p. 2538-2542 , 2017
Link:
https://doi.org/10.1109/PVSC.2017.8366561
RT T1
2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
: T1
In situ control over the sublattice orientation of GaP/Si(100): As virtual substrates for tandem absorbers
UL https://suche.suub.uni-bremen.de/peid=ieee-8366561&Exemplar=1&LAN=DE A1 Paszuk, Agnieszka A1 Supplie, Oliver A1 Bruckner, Sebastian A1 May, Matthias M. A1 Dobrich, Anja A1 Nagelein, Andreas A1 Kim, Boram A1 Nakano, Yoshiaki A1 Sugiyama, Masakazu A1 Kleinschmidt, Peter A1 Hannappel, Thomas YR 2017 K1 Surface reconstruction K1 Surface treatment K1 Silicon K1 Annealing K1 MOCVD K1 Substrates K1 Shape K1 lifetime K1 fill factor K1 two diode model SP 2538 OP 2542 LK http://dx.doi.org/https://doi.org/10.1109/PVSC.2017.8366561 DO https://doi.org/10.1109/PVSC.2017.8366561 SF ELIB - SuUB Bremen
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