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1 Ergebnisse
1
Improvement of the I2t capability for xEV active short circ..:
, In:
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)
,
Higuchi, Keiichi
;
Nakano, Hayato
;
Osawa, Akihiro
... - p. 2764-2767 , 2018
Link:
https://doi.org/10.23919/IPEC.2018.8507439
RT T1 <cTitle>2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia)</cTitle>: T1 <Title>Improvement of the I2t capability for xEV active short circuit protection by combination of RC-IGBT and Leadframe technologies</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8507439&Exemplar=1&LAN=DE A1 Higuchi, Keiichi A1 Nakano, Hayato A1 Osawa, Akihiro A1 Kitamura, Akio A1 Takenoiri, Shunji A1 Inoue, Daisuke A1 Yoshida, Souichi A1 Gohara, Hiromichi A1 Otsuki, Masahito YR 2018 K1 Lead K1 Insulated gate bipolar transistors K1 Finite element analysis K1 Temperature distribution K1 Multichip modules K1 Heating systems K1 Three-dimensional displays K1 I2t K1 Leadframe K1 RC-IGBT SP 2764 OP 2767 LK http://dx.doi.org/https://doi.org/10.23919/IPEC.2018.8507439 DO https://doi.org/10.23919/IPEC.2018.8507439 SF ELIB - SuUB Bremen
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