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Ar RIE to improve the source/drain contact in GaN HEMT:

, In: 2018 14th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT),
Zhu, K.M. ; Deng, J.N. ; Cao, X.Y.. - p. 1-3 , 2018
Link: https://doi.org/10.1109/ICSICT.2018.8565005