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1 Ergebnisse
1
Design of a Low Temperature Drift Undervoltage Lockout Circ..:
, In:
2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
,
Guo, Weiling
;
Du, Shuai
;
Bai, Changqing
.. - p. 1-4 , 2018
Link:
https://doi.org/10.1109/IFWS.2018.8587382
RT T1 <cTitle>2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)</cTitle>: T1 <Title>Design of a Low Temperature Drift Undervoltage Lockout Circuit-Used for GaN FET Power Driver IC</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8587382&Exemplar=1&LAN=DE A1 Guo, Weiling A1 Du, Shuai A1 Bai, Changqing A1 Lei, Liang A1 Zhu, Yanxu YR 2018 K1 Gallium nitride K1 Threshold voltage K1 Temperature K1 Power supplies K1 MOSFET K1 Integrated circuits SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/IFWS.2018.8587382 DO https://doi.org/10.1109/IFWS.2018.8587382 SF ELIB - SuUB Bremen
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