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1 Ergebnisse
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Experimental analysis of electro-thermal interaction in nor..:
, In:
2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)
,
Riccio, M.
;
Romano, G.
;
Borghese, A.
... - p. 1-6 , 2018
Link:
https://doi.org/10.1109/ESARS-ITEC.2018.8607347
RT T1 <cTitle>2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)</cTitle>: T1 <Title>Experimental analysis of electro-thermal interaction in normally-off pGaN HEMT devices</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8607347&Exemplar=1&LAN=DE A1 Riccio, M. A1 Romano, G. A1 Borghese, A. A1 Maresca, L. A1 Breglio, G. A1 Irace, A. A1 Longobardi, G. YR 2018 K1 Gallium nitride K1 Silicon K1 Temperature K1 Temperature measurement K1 Logic gates K1 HEMTs K1 Resistance K1 component K1 Electro-thermal K1 failure analysis K1 gallium nitride (GaN) K1 short-circuit K1 HEMT SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.1109/ESARS-ITEC.2018.8607347 DO https://doi.org/10.1109/ESARS-ITEC.2018.8607347 SF ELIB - SuUB Bremen
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