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1 Ergebnisse
1
Hole Mobility Model for 6H-SiC Thermoresistive Sensors Simu..:
, In:
2019 International Siberian Conference on Control and Communications (SIBCON)
,
Ivanov, Igor V.
;
Kozlov, Alexander G.
- p. 1-5 , 2019
Link:
https://doi.org/10.1109/SIBCON.2019.8729619
RT T1
2019 International Siberian Conference on Control and Communications (SIBCON)
: T1
Hole Mobility Model for 6H-SiC Thermoresistive Sensors Simulation
UL https://suche.suub.uni-bremen.de/peid=ieee-8729619&Exemplar=1&LAN=DE A1 Ivanov, Igor V. A1 Kozlov, Alexander G. YR 2019 SN 2380-6516 K1 Semiconductor process modeling K1 Mathematical model K1 Doping K1 Silicon carbide K1 Temperature sensors K1 6H-SiC K1 Arora model K1 hole mobility K1 thermoresistive sensors SP 1 OP 5 LK http://dx.doi.org/https://doi.org/10.1109/SIBCON.2019.8729619 DO https://doi.org/10.1109/SIBCON.2019.8729619 SF ELIB - SuUB Bremen
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