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Impact of ultra-thin-layer material parameters on the suppr..:
, In:
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
,
Knezevic, Tihomir
;
Suligoj, Tomislav
;
Nanver, Lis K.
- p. 24-29 , 2019
Link:
https://doi.org/10.23919/MIPRO.2019.8757156
RT T1 <cTitle>2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)</cTitle>: T1 <Title>Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8757156&Exemplar=1&LAN=DE A1 Knezevic, Tihomir A1 Suligoj, Tomislav A1 Nanver, Lis K. YR 2019 SN 2623-8764 K1 Boron K1 Temperature measurement K1 Silicon K1 Photonic band gap K1 Films K1 Semiconductor device measurement K1 Charge carrier processes K1 pure amorphous boron K1 pureB K1 negative fxed interface charge K1 carrier injection K1 ultra-thin-layer K1 TCAD SP 24 OP 29 LK http://dx.doi.org/https://doi.org/10.23919/MIPRO.2019.8757156 DO https://doi.org/10.23919/MIPRO.2019.8757156 SF ELIB - SuUB Bremen
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