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1 Ergebnisse
1
Gate Control Circuit for the LIGBT to Improve the Freewheel..:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Yu, Siyuan
;
Zhu, Jing
;
Lu, Yangyang
... - p. 279-282 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757561
RT T1 <cTitle>2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Gate Control Circuit for the LIGBT to Improve the Freewheeling Characteristics in Monolithic IC</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8757561&Exemplar=1&LAN=DE A1 Yu, Siyuan A1 Zhu, Jing A1 Lu, Yangyang A1 Sun, Weifeng A1 Yang, Bowei A1 Yan, Ding A1 Cheng, Chuanyi A1 Gu, Yan A1 Zhang, Sen A1 Zhang, Yunwu YR 2019 SN 1946-0201 K1 Logic gates K1 Integrated circuits K1 Sensors K1 High-voltage techniques K1 Current measurement K1 Semiconductor device measurement K1 Schottky diodes K1 high voltage K1 gate control circuit K1 reverse recovery SP 279 OP 282 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757561 DO https://doi.org/10.1109/ISPSD.2019.8757561 SF ELIB - SuUB Bremen
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