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An Experimentally Verified 3.3 kV SiC MOSFET Model Suitable..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Borghese, A. ; Riccio, M. ; Maresca, L.... - p. 215-218 , 2019
Link: https://doi.org/10.1109/ISPSD.2019.8757576