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1 Ergebnisse
1
Revealing the Positive Bias Temperature Instability in Norm..:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Huang, Sen
;
Wang, Xinhua
;
Liu, Xinyu
... - p. 411-414 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757587
RT T1 <cTitle>2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Revealing the Positive Bias Temperature Instability in Normally-OFF AlGaN/GaN MIS-HFETs by Constant-Capacitance DLTS</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8757587&Exemplar=1&LAN=DE A1 Huang, Sen A1 Wang, Xinhua A1 Liu, Xinyu A1 Kang, Xuanwu A1 Fan, Jie A1 Yang, Shuo A1 Yin, Haibo A1 Wei, Ke A1 Zheng, Yingkui A1 Wang, Xiaolei A1 Wang, Wenwu A1 Shi, Jingyuan A1 Gao, Hongwei A1 Sun, Qian A1 Chen, Kevin J. YR 2019 SN 1946-0201 K1 Logic gates K1 Temperature measurement K1 Aluminum gallium nitride K1 Wide band gap semiconductors K1 HEMTs K1 MODFETs K1 Substrates K1 GaN K1 normally-OFF K1 MIS-HFETs K1 threshold voltage instability K1 interface states K1 oxide states K1 constant-capacitance DLTS K1 tunnel filling SP 411 OP 414 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757587 DO https://doi.org/10.1109/ISPSD.2019.8757587 SF ELIB - SuUB Bremen
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