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1 Ergebnisse
1
Channel-off Avalanche Instability in SOI Lateral IGBT at Lo..:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Ma, Jie
;
Zhang, Long
;
Zhu, Jing
... - p. 387-390 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757611
RT T1
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Channel-off Avalanche Instability in SOI Lateral IGBT at Low Temperature: Mechanism and Optimization Schemes
UL https://suche.suub.uni-bremen.de/peid=ieee-8757611&Exemplar=1&LAN=DE A1 Ma, Jie A1 Zhang, Long A1 Zhu, Jing A1 Cao, Shilin A1 Li, Ankang A1 Zou, Yanqin A1 Sun, Weifeng A1 Gu, Yan A1 Zhang, Sen A1 Zhang, Yunwu A1 Yang, Zhuo YR 2019 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Electric breakdown K1 Impact ionization K1 Substrates K1 Optimization K1 Stability analysis K1 Thermal stability K1 SOI K1 IGBT K1 off-state K1 avalanche stability K1 low temperature SP 387 OP 390 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757611 DO https://doi.org/10.1109/ISPSD.2019.8757611 SF ELIB - SuUB Bremen
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