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Influence of External Gate Resistance on UIS Capability in ..:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Honda, Masaaki
;
Yamaji, Mizue
;
Arai, Daisuke
... - p. 335-338 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757613
RT T1 <cTitle>2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Influence of External Gate Resistance on UIS Capability in Superjunction MOSFET</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8757613&Exemplar=1&LAN=DE A1 Honda, Masaaki A1 Yamaji, Mizue A1 Arai, Daisuke A1 Suzuki, Noriaki A1 Asada, Takeshi A1 Hirasawa, Wataru A1 Yamaguchi, Takeshi A1 Watanabe, Yuji YR 2019 SN 1946-0201 K1 Logic gates K1 Impact ionization K1 Electric fields K1 MOSFET K1 Semiconductor process modeling K1 Resistance K1 Phosphorus K1 superjunction MOSFET K1 UIS K1 external gate resistance SP 335 OP 338 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757613 DO https://doi.org/10.1109/ISPSD.2019.8757613 SF ELIB - SuUB Bremen
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