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Surge Current Capability of GaN E-HEMTs in Reverse Conducti..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Liu, Yinxiang ; Han, Shaowen ; Yang, Shu. - p. 439-442 , 2019
Link: https://doi.org/10.1109/ISPSD.2019.8757634