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1 Ergebnisse
1
Circuit Dependent Plasma Charging Effect Robustness in 0.16..:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Basso, Michele
;
Riccardi, Damiano
;
Martino, Antonino
.. - p. 399-402 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757635
RT T1
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Circuit Dependent Plasma Charging Effect Robustness in 0.16 um BCD Technology Platform
UL https://suche.suub.uni-bremen.de/peid=ieee-8757635&Exemplar=1&LAN=DE A1 Basso, Michele A1 Riccardi, Damiano A1 Martino, Antonino A1 Galbiati, Paola A1 Bertaiola, Simone YR 2019 SN 1946-0201 K1 Plasmas K1 Logic gates K1 Molybdenum K1 Sulfur K1 Integrated circuit modeling K1 Antennas K1 Substrates K1 plasma K1 charging K1 damage K1 PID K1 circuit robustness K1 HV MOS K1 DMOS K1 BCD K1 power K1 sense-FET SP 399 OP 402 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757635 DO https://doi.org/10.1109/ISPSD.2019.8757635 SF ELIB - SuUB Bremen
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