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Impact of three-dimensional current flow on accurate TCAD s..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Watanabe, Masahiro ; Shigyo, Naoyuki ; Hoshii, Takuya... - p. 311-314 , 2019

Link: https://doi.org/10.1109/ISPSD.2019.8757640

RT 
T1 <cTitle>2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-8757640&Exemplar=1&LAN=DE
				
A1 Watanabe, Masahiro
A1 Shigyo, Naoyuki
A1 Hoshii, Takuya
A1 Furukawa, Kazuyoshi
A1 Kakushima, Kuniyuki
A1 Satoh, Katsumi
A1 Matsudai, Tomoko
A1 Saraya, Takuya
A1 Takakura, Toshihiro
A1 Itou, Kazuo
A1 Fukui, Munetoshi
A1 Suzuki, Shinichi
A1 Takeuchi, Kiyoshi
A1 Muneta, Iriya
A1 Wakabayashi, Hitoshi
A1 Nakajima, Akira
A1 Nishizawa, Shin-Ichi
A1 Tsutsui, Kazuo
A1 Hiramoto, Toshiro
A1 Ohashi, Hiromichi
A1 Iwai, Hiroshi
YR 2019
SN 1946-0201
K1 Insulated gate bipolar transistors
K1 Two dimensional displays
K1 Three-dimensional displays
K1 Solid modeling
K1 Current density
K1 Integrated circuit modeling
K1 IGBT
K1 trench-gate
K1 TCAD simulation
K1 three-dimension current flow
K1 scaling
SP 311
OP 314
LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757640
DO https://doi.org/10.1109/ISPSD.2019.8757640
SF ELIB - SuUB Bremen

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