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1 Ergebnisse
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Impact of three-dimensional current flow on accurate TCAD s..:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Watanabe, Masahiro
;
Shigyo, Naoyuki
;
Hoshii, Takuya
... - p. 311-314 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757640
RT T1
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Impact of three-dimensional current flow on accurate TCAD simulation for trench-gate IGBTs
UL https://suche.suub.uni-bremen.de/peid=ieee-8757640&Exemplar=1&LAN=DE A1 Watanabe, Masahiro A1 Shigyo, Naoyuki A1 Hoshii, Takuya A1 Furukawa, Kazuyoshi A1 Kakushima, Kuniyuki A1 Satoh, Katsumi A1 Matsudai, Tomoko A1 Saraya, Takuya A1 Takakura, Toshihiro A1 Itou, Kazuo A1 Fukui, Munetoshi A1 Suzuki, Shinichi A1 Takeuchi, Kiyoshi A1 Muneta, Iriya A1 Wakabayashi, Hitoshi A1 Nakajima, Akira A1 Nishizawa, Shin-Ichi A1 Tsutsui, Kazuo A1 Hiramoto, Toshiro A1 Ohashi, Hiromichi A1 Iwai, Hiroshi YR 2019 SN 1946-0201 K1 Insulated gate bipolar transistors K1 Two dimensional displays K1 Three-dimensional displays K1 Solid modeling K1 Current density K1 Integrated circuit modeling K1 IGBT K1 trench-gate K1 TCAD simulation K1 three-dimension current flow K1 scaling SP 311 OP 314 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757640 DO https://doi.org/10.1109/ISPSD.2019.8757640 SF ELIB - SuUB Bremen
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