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Planar 1.2kV SiC MOSFETs with retrograde channel profile fo..:

, In: 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Knoll, L. ; Mihaila, A. ; Wirths, S.... - p. 211-214 , 2019
Link: https://doi.org/10.1109/ISPSD.2019.8757648