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1 Ergebnisse
1
Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Tsukuda, Masanori
;
Sudo, Masaki
;
Hasegawa, Kazunori
... - p. 339-342 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757665
RT T1 <cTitle>2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)</cTitle>: T1 <Title>Self-Turn-on-Free 5V Gate Driving for 1200V Scaled IGBT</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8757665&Exemplar=1&LAN=DE A1 Tsukuda, Masanori A1 Sudo, Masaki A1 Hasegawa, Kazunori A1 Abe, Seiya A1 Saraya, Takuya A1 Takakura, Toshihiko A1 Fukui, Munetoshi A1 Itou, Kazuo A1 Suzuki, Shinichi A1 Takeuchi, Kiyoshi A1 Ninomiya, Tamotsu A1 Hiramoto, Toshiro A1 Omura, Ichiro YR 2019 SN 1946-0201 K1 Logic gates K1 Insulated gate bipolar transistors K1 Mathematical model K1 Solid modeling K1 Electric fields K1 Analytical models K1 Threshold voltage K1 scaled IGBT K1 self-turn-on K1 gate shielding layer SP 339 OP 342 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757665 DO https://doi.org/10.1109/ISPSD.2019.8757665 SF ELIB - SuUB Bremen
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