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1 Ergebnisse
1
Practical One-Step Solution of Smoothly Tapered Junction Te..:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Long, Hu
;
Guo, Qing
;
Sheng, Kuang
- p. 155-158 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757687
RT T1
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Practical One-Step Solution of Smoothly Tapered Junction Termination Extension for High Voltage SiC Gate Turn-off Thyristor
UL https://suche.suub.uni-bremen.de/peid=ieee-8757687&Exemplar=1&LAN=DE A1 Long, Hu A1 Guo, Qing A1 Sheng, Kuang YR 2019 SN 1946-0201 K1 Etching K1 Silicon carbide K1 Apertures K1 Junctions K1 Electric fields K1 Fabrication K1 SiC K1 power devices K1 high voltage K1 terminations K1 junction termination extension K1 JTE K1 GTO K1 graded mask SP 155 OP 158 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757687 DO https://doi.org/10.1109/ISPSD.2019.8757687 SF ELIB - SuUB Bremen
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