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1 Ergebnisse
1
Cu Double Side Plating Technology for High Performance and ..:
, In:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
,
Kobayashi, Hitoshi
;
Ohguro, Tatsuya
;
Kai, Tetsuya
... - p. 515-518 , 2019
Link:
https://doi.org/10.1109/ISPSD.2019.8757691
RT T1
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
: T1
Cu Double Side Plating Technology for High Performance and Reliable Si Power Devices
UL https://suche.suub.uni-bremen.de/peid=ieee-8757691&Exemplar=1&LAN=DE A1 Kobayashi, Hitoshi A1 Ohguro, Tatsuya A1 Kai, Tetsuya A1 Motai, Takako A1 Ogawa, Masaaki A1 Matsuo, Mie A1 Oohashi, Kenichi A1 Kozumi, Shinsuke A1 Takada, Yoshiharu A1 Kojima, Hideharu A1 Masuko, Shingo A1 Yonezawa, Naoki A1 Komatsu, Akira A1 Nishiwaki, Tatsuya A1 Hara, Takuma A1 Takahashi, Mari A1 Ezaki, Akira A1 Ohtsuka, Kenichi A1 Inumiya, Seiji A1 Suguro, Kyoichi YR 2019 SN 1946-0201 K1 Silicon K1 Plating K1 Substrates K1 Temperature dependence K1 MOSFET K1 Metals K1 Resistance K1 Cu K1 Double side K1 plating K1 warpage K1 SOA K1 Ron SP 515 OP 518 LK http://dx.doi.org/https://doi.org/10.1109/ISPSD.2019.8757691 DO https://doi.org/10.1109/ISPSD.2019.8757691 SF ELIB - SuUB Bremen
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