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1 Ergebnisse
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The Demonstration of Recessed Anodes AlGaN/GaN Schottky Bar..:
, In:
2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
,
Hsueh, Kuang-Po
;
Wang, Hao-Yu
;
Chiu, Hsien-Chin
... - p. 1-4 , 2019
Link:
https://doi.org/10.1109/WiPDAAsia.2019.8760336
RT T1
2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia)
: T1
The Demonstration of Recessed Anodes AlGaN/GaN Schottky Barrier Diodes Using Microwave Cyclic Plasma Oxidation/Wet Etching Techniques
UL https://suche.suub.uni-bremen.de/peid=ieee-8760336&Exemplar=1&LAN=DE A1 Hsueh, Kuang-Po A1 Wang, Hao-Yu A1 Chiu, Hsien-Chin A1 Wang, Hsiang Chun A1 Kao, Hsuan-Ling A1 Chien, Feng-Tso YR 2019 K1 Aluminum gallium nitride K1 Wide band gap semiconductors K1 Anodes K1 Plasmas K1 Standards K1 Oxidation K1 Gallium nitride K1 Microwave plasma oxidation K1 wet etching K1 GaN K1 Schottky barrier diode K1 recessed anode K1 MgZnO SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/WiPDAAsia.2019.8760336 DO https://doi.org/10.1109/WiPDAAsia.2019.8760336 SF ELIB - SuUB Bremen
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