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1 Ergebnisse
1
First Vertically Stacked, Compressively Strained, and Trian..:
, In:
2019 Symposium on VLSI Technology
,
Huang, Yu-Shiang
;
Ye, Hung-Yu
;
Lu, Fang-Liang
... - p. T180-T181 , 2019
Link:
https://doi.org/10.23919/VLSIT.2019.8776550
RT T1
2019 Symposium on VLSI Technology
: T1
First Vertically Stacked, Compressively Strained, and Triangular Ge0.91Sn0.09pGAAFETs with High $\mathbf{I_{ON}}$ of $\mathbf{19.3}\mu \mathbf{A}\ \mathbf{at}\ \mathbf{V_{OV}}=\mathbf{V}_{\mathbf{DS}}=\mathbf{-0.5V},\ \mathbf{G}_{\mathbf{m}}$ of $\mathbf{50.2}\mu \mathbf{S}$ at $\mathbf{V_{DS}}=\mathbf{-0.5}\mathbf{V}$ and Low $\mathbf{SS_{lin}}$ of 84m V/dec by CVD Epitaxy and Orientation Dependent Etching
UL https://suche.suub.uni-bremen.de/peid=ieee-8776550&Exemplar=1&LAN=DE A1 Huang, Yu-Shiang A1 Ye, Hung-Yu A1 Lu, Fang-Liang A1 Liu, Yi-Chun A1 Tu, Chien-Te A1 Lin, Chung-Yi A1 Lin, Shih-Ya A1 Jan, Sun-Rang A1 Liu, C. W. YR 2019 SN 2158-9682 K1 Germanium K1 Etching K1 Strain K1 Ions K1 FinFETs K1 Effective mass K1 Very large scale integration SP T180 OP T181 LK http://dx.doi.org/https://doi.org/10.23919/VLSIT.2019.8776550 DO https://doi.org/10.23919/VLSIT.2019.8776550 SF ELIB - SuUB Bremen
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