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Acceptors activation of Mg-ion implanted GaN by ultra-high-..:
, In:
2019 19th International Workshop on Junction Technology (IWJT)
,
Sakurai, Hideki
;
Omori, Masato
;
Yamada, Shinji
... - p. 1-2 , 2019
Link:
https://doi.org/10.23919/IWJT.2019.8802621
RT T1
2019 19th International Workshop on Junction Technology (IWJT)
: T1
Acceptors activation of Mg-ion implanted GaN by ultra-high-pressure annealing
UL https://suche.suub.uni-bremen.de/peid=ieee-8802621&Exemplar=1&LAN=DE A1 Sakurai, Hideki A1 Omori, Masato A1 Yamada, Shinji A1 Koura, Akihiko A1 Suzuki, Hideo A1 Narita, Tetsuo A1 Kataoka, Keita A1 Horita, Masahiro A1 kowski, Michal Bo A1 Suda, Jun A1 Kachi, Tetsu YR 2019 K1 Annealing K1 Gallium nitride K1 Temperature measurement K1 Temperature K1 Temperature dependence K1 Performance evaluation K1 Surface treatment SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.23919/IWJT.2019.8802621 DO https://doi.org/10.23919/IWJT.2019.8802621 SF ELIB - SuUB Bremen
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