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1 Ergebnisse
1
Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by ..:
, In:
2019 19th International Workshop on Junction Technology (IWJT)
,
Matsuura, K.
;
Hamada, M.
;
Hamada, T.
... - p. 1-4 , 2019
Link:
https://doi.org/10.23919/IWJT.2019.8802622
RT T1 <cTitle>2019 19th International Workshop on Junction Technology (IWJT)</cTitle>: T1 <Title>Normally-Off Sputtered-MoS2 nMISFETs with MoSi2 Contact by Sulfur Powder Annealing and ALD Al2O3 Gate Dielectric for Chip Level Integration</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8802622&Exemplar=1&LAN=DE A1 Matsuura, K. A1 Hamada, M. A1 Hamada, T. A1 Tanigawa, H. A1 Sakamoto, T. A1 Cao, W. A1 Parto, K. A1 Hori, A. A1 Muneta, I. A1 Kawanago, T. A1 Kakushima, K. A1 Tsutsui, K. A1 Ogura, A. A1 Banerjee, K. A1 Wakabayashi, H. YR 2019 K1 Sulfur K1 Molybdenum K1 Logic gates K1 Aluminum oxide K1 Annealing K1 Charge carrier density K1 Resistance K1 Transition metal di-chalcogenide K1 MoS2 K1 Normally-off K1 Sputtering K1 Sulfur powder anneal K1 MoSi2 SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.23919/IWJT.2019.8802622 DO https://doi.org/10.23919/IWJT.2019.8802622 SF ELIB - SuUB Bremen
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