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The First GeSn Gate-All-Around Nanowire P-FET on the GeSnOI..:

, In: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),
Kang, Yuye ; Han, Kaizhen ; Kong, Eugene Y.-J.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/VLSI-TSA.2019.8804647