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Backside Si passivation: Leading to high performance UTB Ge..:

, In: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),
Chang, Wen Hsin ; Irisawa, Toshifumi ; Ishii, Hiroyuki.. - p. 1-2 , 2019
Link: https://doi.org/10.1109/VLSI-TSA.2019.8804696