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1 Ergebnisse
1
Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA ..:
, In:
2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)
,
Huang, Yu-Shiang
;
Lu, Fang-Liang
;
Ye, Hung-Yu
... - p. 1-2 , 2019
Link:
https://doi.org/10.1109/VLSI-TSA.2019.8804698
RT T1 <cTitle>2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)</cTitle>: T1 <Title>Novel Vertically-Stacked Tensily-Strained Ge0.85Si0.15 GAA n-Channels on a Si Channel with $\mathrm{SS}=76\mathrm{mV}/\mathrm{dec}, \mathrm{DIBL} =36\mathrm{mV}/\mathrm{V}$, and $\mathrm{I}_{\mathrm{on}}/\mathrm{I}_{\mathrm{off}}=1.2\mathrm{E}7$</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8804698&Exemplar=1&LAN=DE A1 Huang, Yu-Shiang A1 Lu, Fang-Liang A1 Ye, Hung-Yu A1 Tsou, Ya-Jui A1 Liu, Yi-Chun A1 Tu, Chien-Te A1 Liu, C. W. YR 2019 K1 Silicon K1 Germanium K1 Ions K1 Performance evaluation K1 Strain K1 Reliability K1 Photonic band gap SP 1 OP 2 LK http://dx.doi.org/https://doi.org/10.1109/VLSI-TSA.2019.8804698 DO https://doi.org/10.1109/VLSI-TSA.2019.8804698 SF ELIB - SuUB Bremen
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