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1 Ergebnisse
1
Lasing Characteristics of GalnAsP SCH MQW High-mesa Laser o..:
, In:
2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC)
,
Tsushima, Koki
;
Uchida, Kazuki
;
Han, Xu
... - p. 1-3 , 2019
Link:
https://doi.org/10.23919/PS.2019.8818102
RT T1 <cTitle>2019 24th OptoElectronics and Communications Conference (OECC) and 2019 International Conference on Photonics in Switching and Computing (PSC)</cTitle>: T1 <Title>Lasing Characteristics of GalnAsP SCH MQW High-mesa Laser on Silicon Substrate</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8818102&Exemplar=1&LAN=DE A1 Tsushima, Koki A1 Uchida, Kazuki A1 Han, Xu A1 Sugiyama, Hirokazu A1 Aikawa, Masaki A1 Hayasaka, Natsuki A1 Matsuura, Masaki A1 Ishizaki, Takahiro A1 Shirai, Takuto A1 Shimomura, Kazuhiko YR 2019 K1 Substrates K1 Silicon K1 Quantum well devices K1 III-V semiconductor materials K1 Indium phosphide K1 Lasers K1 Epitaxial growth K1 Si photonic and heterogeneous platform SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.23919/PS.2019.8818102 DO https://doi.org/10.23919/PS.2019.8818102 SF ELIB - SuUB Bremen
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