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1 Ergebnisse
1
Improved Electrical Degradation of AlInGaN/GaN HEMT by usin..:
, In:
2019 Compound Semiconductor Week (CSW)
,
Sanyal, Indraneel
;
Hu, Ting-Yu
;
Lee, Yen-Chang
.. - p. 1-1 , 2019
Link:
https://doi.org/10.1109/ICIPRM.2019.8819108
RT T1
2019 Compound Semiconductor Week (CSW)
: T1
Improved Electrical Degradation of AlInGaN/GaN HEMT by using Triethylgallium Grown GaN channel and Cap
UL https://suche.suub.uni-bremen.de/peid=ieee-8819108&Exemplar=1&LAN=DE A1 Sanyal, Indraneel A1 Hu, Ting-Yu A1 Lee, Yen-Chang A1 Lin, En-Shuo A1 Chyi, Jen-Inn YR 2019 K1 Gallium nitride K1 Degradation K1 HEMTs K1 Transconductance K1 Logic gates K1 Electrical engineering SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.1109/ICIPRM.2019.8819108 DO https://doi.org/10.1109/ICIPRM.2019.8819108 SF ELIB - SuUB Bremen
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