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1 Ergebnisse
1
GaN HEMT Characterization for Base Stations:
, In:
2019 Compound Semiconductor Week (CSW)
,
Yamamoto, Hiroshi
;
Kikuchi, Ken
;
Ui, Norihiko
- p. 1-1 , 2019
Link:
https://doi.org/10.1109/ICIPRM.2019.8819143
RT T1
2019 Compound Semiconductor Week (CSW)
: T1
GaN HEMT Characterization for Base Stations
UL https://suche.suub.uni-bremen.de/peid=ieee-8819143&Exemplar=1&LAN=DE A1 Yamamoto, Hiroshi A1 Kikuchi, Ken A1 Ui, Norihiko YR 2019 K1 Gallium nitride K1 HEMTs K1 Base stations K1 Industries K1 Impedance K1 Time-domain analysis SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.1109/ICIPRM.2019.8819143 DO https://doi.org/10.1109/ICIPRM.2019.8819143 SF ELIB - SuUB Bremen
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