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1 Ergebnisse
1
Effect of introducing optical blanking to GaN epitaxy by us..:
, In:
2019 Compound Semiconductor Week (CSW)
,
Kodama, Kazuki
;
Ueda, Daisuke
- p. 1-1 , 2019
Link:
https://doi.org/10.1109/ICIPRM.2019.8819360
RT T1
2019 Compound Semiconductor Week (CSW)
: T1
Effect of introducing optical blanking to GaN epitaxy by using pulsed laser deposition technology
UL https://suche.suub.uni-bremen.de/peid=ieee-8819360&Exemplar=1&LAN=DE A1 Kodama, Kazuki A1 Ueda, Daisuke YR 2019 K1 Epitaxial growth K1 Blanking K1 Gallium nitride K1 Pulsed laser deposition K1 Semiconductor lasers K1 Technological innovation SP 1 OP 1 LK http://dx.doi.org/https://doi.org/10.1109/ICIPRM.2019.8819360 DO https://doi.org/10.1109/ICIPRM.2019.8819360 SF ELIB - SuUB Bremen
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