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1 Ergebnisse
1
ALD oxides for GaN interfaces: a comparative view on the fl..:
, In:
2019 21st International Conference on Transparent Optical Networks (ICTON)
,
Tomasiunas, R.
;
Reklaitis, I.
;
Radiunas, E.
... - p. 1-4 , 2019
Link:
https://doi.org/10.1109/ICTON.2019.8840230
RT T1
2019 21st International Conference on Transparent Optical Networks (ICTON)
: T1
ALD oxides for GaN interfaces: a comparative view on the flat band
UL https://suche.suub.uni-bremen.de/peid=ieee-8840230&Exemplar=1&LAN=DE A1 Tomasiunas, R. A1 Reklaitis, I. A1 Radiunas, E. A1 Juska, G. A1 Ritasalo, R. A1 Pilvi, T. A1 Mandl, M. A1 Taeger, S. A1 Strassburg, M. YR 2019 SN 2161-2064 K1 Water K1 Hafnium compounds K1 Logic gates K1 Temperature measurement K1 Plasma temperature K1 Gallium nitride K1 Aluminum oxide K1 oxides K1 metal-oxide-semiconductor K1 atomic layer deposition K1 gallium nitride K1 flat-band voltage K1 interface states SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/ICTON.2019.8840230 DO https://doi.org/10.1109/ICTON.2019.8840230 SF ELIB - SuUB Bremen
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