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3.3V ESD Clamp structure susceptibility towards Pseudo Latc..:
, In:
2019 41st Annual EOS/ESD Symposium (EOS/ESD)
,
Mittal, Anurag
;
Bansal, Nitin
;
Loiseau, Alain
... - p. 1-6 , 2019
Link:
https://doi.org/10.23919/EOS/ESD.2019.8869995
RT T1
2019 41st Annual EOS/ESD Symposium (EOS/ESD)
: T1
3.3V ESD Clamp structure susceptibility towards Pseudo Latch Up in 22nm FDSOI
UL https://suche.suub.uni-bremen.de/peid=ieee-8869995&Exemplar=1&LAN=DE A1 Mittal, Anurag A1 Bansal, Nitin A1 Loiseau, Alain A1 Ginawi, Ahmed A1 Liang, Wei A1 Yerragudi, Shameer Basha YR 2019 K1 Clamps K1 Electrostatic discharges K1 Silicon-on-insulator K1 Latches K1 Logic gates K1 Leakage currents K1 Substrates SP 1 OP 6 LK http://dx.doi.org/https://doi.org/10.23919/EOS/ESD.2019.8869995 DO https://doi.org/10.23919/EOS/ESD.2019.8869995 SF ELIB - SuUB Bremen
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