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1 Ergebnisse
1
Numerical Investigation of the Leakage Current and Blocking..:
, In:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Balestra, Luigi
;
Reggiani, Susanna
;
Gnudi, Antonio
... - p. 1-4 , 2019
Link:
https://doi.org/10.1109/SISPAD.2019.8870354
RT T1
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
Numerical Investigation of the Leakage Current and Blocking Capabilities of High-Power Diodes with Doped DLC Passivation Layers
UL https://suche.suub.uni-bremen.de/peid=ieee-8870354&Exemplar=1&LAN=DE A1 Balestra, Luigi A1 Reggiani, Susanna A1 Gnudi, Antonio A1 Gnani, Elena A1 Baccarani, Giorgio A1 Dobrzynska, Jagoda A1 Vobecky, Jan YR 2019 SN 1946-1577 K1 Doping K1 Electric fields K1 Silicon K1 Passivation K1 Mathematical model K1 Semiconductor process modeling K1 Leakage currents K1 TCAD modeling K1 Diamond-Like Carbon simulation K1 bevel termination K1 large-area diode SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SISPAD.2019.8870354 DO https://doi.org/10.1109/SISPAD.2019.8870354 SF ELIB - SuUB Bremen
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