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1 Ergebnisse
1
A new wet etching method for black phosphorus layer number ..:
, In:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Liu, Teren
;
Fang, Tao
;
Kavanagh, Karen
.. - p. 1-3 , 2019
Link:
https://doi.org/10.1109/SISPAD.2019.8870363
RT T1
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
A new wet etching method for black phosphorus layer number engineering: experiment, modeling and DFT simulations
UL https://suche.suub.uni-bremen.de/peid=ieee-8870363&Exemplar=1&LAN=DE A1 Liu, Teren A1 Fang, Tao A1 Kavanagh, Karen A1 Yu, Hongyu A1 Xia, Guangrui Maggie YR 2019 SN 1946-1577 K1 Etching K1 Atomic layer deposition K1 Iodine K1 Two dimensional displays K1 Phosphorus K1 Discrete Fourier transforms K1 Absorption K1 Black Phosphorus K1 atomic layer etching K1 Density Functional Theory K1 etching process simulation K1 absorption energy SP 1 OP 3 LK http://dx.doi.org/https://doi.org/10.1109/SISPAD.2019.8870363 DO https://doi.org/10.1109/SISPAD.2019.8870363 SF ELIB - SuUB Bremen
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