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Compact Modelling of Resistive Switching Devices based on t..:
, In:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
La Torre, Camilla
;
Zurhelle, Alexander F.
;
Menzel, Stephan
- p. 1-4 , 2019
Link:
https://doi.org/10.1109/SISPAD.2019.8870538
RT T1
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
: T1
Compact Modelling of Resistive Switching Devices based on the Valence Change Mechanism
UL https://suche.suub.uni-bremen.de/peid=ieee-8870538&Exemplar=1&LAN=DE A1 La Torre, Camilla A1 Zurhelle, Alexander F. A1 Menzel, Stephan YR 2019 SN 1946-1577 K1 Switches K1 Plugs K1 Integrated circuit modeling K1 Electrodes K1 Computational modeling K1 Mathematical model K1 Semiconductor process modeling K1 ReRAM K1 complementary switching K1 modelling K1 valence change mechanism SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SISPAD.2019.8870538 DO https://doi.org/10.1109/SISPAD.2019.8870538 SF ELIB - SuUB Bremen
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