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1 Ergebnisse
1
Scaling-aware TCAD Parameter Extraction Methodology for Mob..:
, In:
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Medina-Bailon, Cristina
;
Dutta, Tapas
;
Klupfel, Fabian
... - p. 1-4 , 2019
Link:
https://doi.org/10.1109/SISPAD.2019.8870556
RT T1 <cTitle>2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)</cTitle>: T1 <Title>Scaling-aware TCAD Parameter Extraction Methodology for Mobility Prediction in Tri-gate Nanowire Transistors</Title> UL https://suche.suub.uni-bremen.de/peid=ieee-8870556&Exemplar=1&LAN=DE A1 Medina-Bailon, Cristina A1 Dutta, Tapas A1 Klupfel, Fabian A1 Barraud, Sylvain A1 Georgiev, Vihar A1 Lorenz, Jurgen A1 Asenov, Asen YR 2019 SN 1946-1577 K1 Scattering K1 Logic gates K1 Semiconductor process modeling K1 Capacitance-voltage characteristics K1 Calibration K1 Transistors K1 Semiconductor device modeling K1 Density Gradient K1 Monte Carlo K1 Remote Coulomb Scattering K1 Phonon Scattering K1 Surface Roughness Scattering K1 Capacitance - Voltage characteristics K1 Mobility K1 Trigate MOSFETs SP 1 OP 4 LK http://dx.doi.org/https://doi.org/10.1109/SISPAD.2019.8870556 DO https://doi.org/10.1109/SISPAD.2019.8870556 SF ELIB - SuUB Bremen
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