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Building the Quasi One Dimensional Transistor from 2D Mater..:

, In: 2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON),

Galiy, Pavlo V. ; Randle, Michael ; Lipatov, Alexey... - p. 679-682 , 2019

Link: https://doi.org/10.1109/UKRCON.2019.8879963

RT 
T1 <cTitle>2019 IEEE 2nd Ukraine Conference on Electrical and Computer Engineering (UKRCON)</cTitle>: T1 <Title>Building the Quasi One Dimensional Transistor from 2D Materials</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-8879963&Exemplar=1&LAN=DE
				
A1 Galiy, Pavlo V.
A1 Randle, Michael
A1 Lipatov, Alexey
A1 Wang, Lu
A1 Gilbert, Simeon
A1 Vorobeva, Nataliia
A1 Kumar, Avinash
A1 Kwan, Chun-Pui
A1 Nathawat, Jubin
A1 Barut, Bilal
A1 Yin, Shenchu
A1 Arabchigavkani, Nargess
A1 Nenchuk, Taras M.
A1 Komesu, Takashi
A1 He, Keke
A1 Yost, Andrew
A1 Singisetti, Uttam
A1 Mei, Wai-Ning
A1 Sinitskii, Alexander
A1 Bird, Jonathan P.
A1 Dowben, Peter A.
YR 2019
K1 Field effect transistors
K1 Density functional theory
K1 Magnetic semiconductors
K1 Ohmic contacts
K1 Titanium compounds
K1 Indium compounds
K1 Semiconductor device modeling
K1 novel materials for beyond CMOS
K1 quasi one dimensional semiconductors
K1 TiS₃
K1 In₄Se₃
SP 679
OP 682
LK http://dx.doi.org/https://doi.org/10.1109/UKRCON.2019.8879963
DO https://doi.org/10.1109/UKRCON.2019.8879963
SF ELIB - SuUB Bremen

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