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2-Mb Embedded Phase Change Memory With 16-ns Read Access Ti..:

, In: ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC),

Carissimi, M. ; Zurla, R. ; Auricchio, C.... - p. 135-138 , 2019

Link: https://doi.org/10.1109/ESSCIRC.2019.8902656

RT 
T1 <cTitle>ESSCIRC 2019 - IEEE 45th European Solid State Circuits Conference (ESSCIRC)</cTitle>: T1 <Title>2-Mb Embedded Phase Change Memory With 16-ns Read Access Time and 5-Mb/s Write Throughput in 90-nm BCD Technology for Automotive Applications</Title>

UL https://suche.suub.uni-bremen.de/peid=ieee-8902656&Exemplar=1&LAN=DE
				
A1 Carissimi, M.
A1 Zurla, R.
A1 Auricchio, C.
A1 Calvetti, E.
A1 Capecchi, L.
A1 Croce, L.
A1 Zanchi, S.
A1 Rana, V.
A1 Mishra, P.
A1 Mukherjee, R.
A1 Tyagi, V.
A1 Disegni, F.
A1 Manfre, D.
A1 Torti, C.
A1 Gallinari, D.
A1 Rossi, S.
A1 Gambero, A.
A1 Brambilla, D.
A1 Zuliani, P.
A1 Cabrini, A.
A1 Torelli, G.
A1 Pasotti, M.
YR 2019
SN 2643-1319
K1 Macrocell networks
K1 Automotive engineering
K1 Programming
K1 Solid state circuits
K1 Phase change memory
K1 Microprocessors
K1 Computer architecture
K1 Automotive applications
K1 embedded memory
K1 germanium-rich alloy
K1 nonvolatile memory
K1 phase change memory
K1 smart power devices
SP 135
OP 138
LK http://dx.doi.org/https://doi.org/10.1109/ESSCIRC.2019.8902656
DO https://doi.org/10.1109/ESSCIRC.2019.8902656
SF ELIB - SuUB Bremen

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