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1 Ergebnisse
1
Effect of Inverter Output dv/dt with Respect to Gate Resist..:
, In:
2019 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Kim, Heonyoung
;
Acharya, Sayan
;
Anurag, Anup
.. - p. 2301-2306 , 2019
Link:
https://doi.org/10.1109/ECCE.2019.8912249
RT T1
2019 IEEE Energy Conversion Congress and Exposition (ECCE)
: T1
Effect of Inverter Output dv/dt with Respect to Gate Resistance and Loss Comparison with dv/dt Filters for SiC MOSFET based High Speed Machine Drive Applications
UL https://suche.suub.uni-bremen.de/peid=ieee-8912249&Exemplar=1&LAN=DE A1 Kim, Heonyoung A1 Acharya, Sayan A1 Anurag, Anup A1 Kim, Byeong-Heon A1 Bhattacharya, Subhashish YR 2019 SN 2329-3748 K1 Logic gates K1 Inverters K1 MOSFET K1 Resistance K1 Transient analysis K1 Switches K1 Silicon carbide K1 wide band gap (WBG) K1 silicon carbide (SiC) K1 high dv/dt K1 dv/dt filter K1 3-phase inverter K1 high speed machine drives K1 gate resistance SP 2301 OP 2306 LK http://dx.doi.org/https://doi.org/10.1109/ECCE.2019.8912249 DO https://doi.org/10.1109/ECCE.2019.8912249 SF ELIB - SuUB Bremen
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