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1 Ergebnisse
1
Development and Verification of Protection Circuit for Hard..:
, In:
2019 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Yano, Shinya
;
Nakamatsu, Yusuke
;
Horiguchi, Takeshi
. - p. 6661-6665 , 2019
Link:
https://doi.org/10.1109/ECCE.2019.8912618
RT T1
2019 IEEE Energy Conversion Congress and Exposition (ECCE)
: T1
Development and Verification of Protection Circuit for Hard Switching Fault of SiC MOSFET by Using Gate-Source Voltage and Gate Charge
UL https://suche.suub.uni-bremen.de/peid=ieee-8912618&Exemplar=1&LAN=DE A1 Yano, Shinya A1 Nakamatsu, Yusuke A1 Horiguchi, Takeshi A1 Soda, Shinnosuke YR 2019 SN 2329-3748 K1 Logic gates K1 MOSFET K1 Silicon carbide K1 Temperature measurement K1 Switches K1 Circuit faults K1 Monitoring K1 SiC K1 HSF K1 Short-Circuit K1 Gate Charge (Qg) K1 Gate-Source Voltage (Vgs) SP 6661 OP 6665 LK http://dx.doi.org/https://doi.org/10.1109/ECCE.2019.8912618 DO https://doi.org/10.1109/ECCE.2019.8912618 SF ELIB - SuUB Bremen
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