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1 Ergebnisse
1
Gate Drive for Very Fast Resonant Conversion using SiC Swit..:
, In:
2019 IEEE Energy Conversion Congress and Exposition (ECCE)
,
Tong, Zikang
;
Gu, Lei
;
Surakitbovorn, Kawin
. - p. 6647-6654 , 2019
Link:
https://doi.org/10.1109/ECCE.2019.8912635
RT T1
2019 IEEE Energy Conversion Congress and Exposition (ECCE)
: T1
Gate Drive for Very Fast Resonant Conversion using SiC Switch
UL https://suche.suub.uni-bremen.de/peid=ieee-8912635&Exemplar=1&LAN=DE A1 Tong, Zikang A1 Gu, Lei A1 Surakitbovorn, Kawin A1 Rivas-Davila, Juan M. YR 2019 SN 2329-3748 K1 Logic gates K1 Silicon carbide K1 Gate drivers K1 Gallium nitride K1 MOSFET K1 Harmonic analysis K1 Gain SP 6647 OP 6654 LK http://dx.doi.org/https://doi.org/10.1109/ECCE.2019.8912635 DO https://doi.org/10.1109/ECCE.2019.8912635 SF ELIB - SuUB Bremen
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